CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs
p channel mosfet driver circuit
,n channel mos field effect transistor
CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
FEATURES
- CommonSourceConn ection
- Ultr a L o w Drain to Drain On-Resistance
- Space Saving SON 3.3 x 3.3mm Plastic Package
- Optimized for 5V Gate Drive
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free APPLICATIONS
APPLICATIONS
- Adaptor/USB Input Protection for Notebook
- PCs and Tablets
PRODUCT SUMMARY
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain to Source Voltage |
30 |
V |
|
|
Qg |
Gate Charge Total (4.5V) |
6.3 |
nC |
|
|
Qgd |
Gate Charge Gate to Drain |
0.7 |
nC |
|
|
RDD(on) |
Drain to Drain On Resistance (Q1+Q2) |
VGS = 4.5V |
31 |
mΩ |
|
VGS = 8V |
27 |
mΩ |
||
|
VGS(th) |
Threshold Voltage |
1.0 |
V |
|
ORDERING INFORMATION
|
Device |
Package |
Media
|
Qty |
Ship |
|
CSD87312Q3E |
SON 3.3 x 3.3mm Plastic Package |
13-In ch Reel |
2500 |
Tape and Reel |
ABSOLUTE MAXIMUM RATINGS
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain to Source Voltage |
30 |
V |
|
VGS |
Gate to Source Voltage |
+10/-8 |
V |
|
ID |
(1) Continuous Drain Current, TC = 25°C |
27 |
A |
|
IDM |
Pulsed Drain Current (2) |
45 |
A |
|
PD |
Power Dissipation |
2.5 |
W |
|
TJ, TSTG |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω |
29 |
mJ |
DESCRIPTION
The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
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