CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors
p channel mosfet driver circuit
,mosfet motor control circuit
CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET
1 Features
- Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Low RDS(on)
-
Pb and Halogen Free
-
RoHS Compliant
-
SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
-
DC-DC Converters
-
Battery Management
-
Load Switch
-
Battery Protection
3 Description
This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-source voltage |
–20 |
V |
|
|
Qg |
Gate charge total (–4.5 V) |
7.5 |
nC |
|
|
Qgd |
Gate charge gate to drain |
1.1 |
nC |
|
|
RDS(on) |
Drain-to-source on resistance |
VGS = –1.8 V |
74 |
mΩ |
|
VGS = –2.5 V |
13.3 |
mΩ |
||
|
VGS = –4.5 V |
7.7 |
mΩ |
||
|
Vth |
Threshold voltage |
–0.9 |
V |
|
Ordering Information(1)
|
DEVICE |
QTY |
MEDIA |
PACKAGE |
SHIP |
|
CSD25402Q3A |
2500 |
13-Inch Reel |
SON 3.3 mm × 3.3 mm Plastic Package |
Tape and Reel |
|
CSD25402Q3AT |
250 |
7-Inch Reel |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-source voltage |
–20 |
V |
|
VGS |
Gate-to-source voltage |
+12 or –12 |
V |
|
ID |
Continuous drain current, TC = 25°C |
–76 |
A |
|
Continuous drain current (package limit) |
–35 |
A |
|
|
Continuous drain current(1) |
–15 |
A |
|
|
IDM |
Pulsed drain current(2) |
–148 |
A |
|
PD |
Power dissipation(1) |
2.8 |
W |
|
Power dissipation, TC = 25°C |
69 |
||
|
TJ |
Operating junction temperature |
–55 to 150 |
°C |
|
Tstg |
Storage temperature |
–55 to 150 |
°C |
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