CSD18504Q5A N Channel Mos Field Effect Transistor 6.6 MOhms Logic Level RoHS Compliant
mosfet motor control circuit
,n channel mos field effect transistor
CSD18504Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET
1 Features
- Ultra-Low Qg and Qgd
-
Low Thermal Resistance
-
Avalanche Rated
-
Logic Level
-
Pb Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 5 mm × 6 mm Plastic Package
2 Applications
-
DC-DC Conversion
-
Secondary Side Synchronous Rectifier
-
Battery Motor Control
3 Description
This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
40 |
V |
|
|
Qg |
Gate Charge Total (4.5 V) |
7.7 |
nC |
|
|
Qgd |
Gate Charge Gate-to-Drain |
2.4 |
nC |
|
|
RDS(on) |
Drain-to-Source On-Resistance |
VGS = 4.5 V |
7.5 |
mΩ |
|
VGS =10V |
5.3 |
mΩ |
||
|
VGS(th) |
Threshold Voltage |
1.9 |
V |
|
Ordering Information
|
Device |
Qty |
Media |
Package |
Ship |
|
CSD18504Q5A |
2500 |
13-Inch Reel |
SON 5 mm × 6 mm Plastic Package |
Tape and Reel |
|
CSD18504Q5AT |
250 |
7-Inch Reel |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
40 |
V |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current (Package limited) |
50 |
A |
|
Continuous Drain Current (Silicon limited), TC = 25°C |
75 |
||
|
Continuous Drain Current(1) |
15 |
||
|
IDM |
Pulsed Drain Current(2) |
275 |
A |
|
PD |
Power Dissipation(1) |
3.1 |
W |
|
Power Dissipation, TC = 25°C |
77 |
||
|
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, single pulse ID =43A,L=0.1mH,RG =25Ω |
92 |
mJ |
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