CSD13381F4 Low Resistance Mosfet Power Transistor N-CH Pwr Single Configuration
p channel mosfet driver circuit
,n channel mos field effect transistor
CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET
1 Features
- Low On-Resistance
-
Low Qg and Qgd
-
Low Threshold Voltage
-
Ultra-Small Footprint (0402 Case Size)
– 1.0mm×0.6mm
-
Ultra-Low Profile
– 0.35 mm Height
-
Integrated ESD Protection Diode
-
– Rated >4 kV HBM
-
– Rated >2 kV CDM
-
-
Lead and Halogen Free
-
RoHS Compliant
2 Applications
-
Optimized for Load Switch Applications
-
Optimized for General Purpose Switching Applications
-
Single-Cell Battery Applications
-
Handheld and Mobile Applications
3 Description
This 140 mΩ, 12 V N-channel FemtoFETTM MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
12 |
V |
|
|
Qg |
Gate Charge Total (4.5 V) |
1060 |
pC |
|
|
Qgd |
Gate Charge Gate-to-Drain |
140 |
pC |
|
|
RDS(on) |
Drain-to-Source On-Resistance |
VGS = 1.8 V |
310 |
mΩ |
|
VGS = 2.5 V |
170 |
mΩ |
||
|
VGS = 4.5 V |
140 |
mΩ |
||
|
VGS(th) |
Threshold Voltage |
0.85 |
V |
|
Ordering Information
|
Device |
Qty |
Media |
Package |
Ship |
|
CSD13381F4 |
3000 |
7-Inch Reel |
Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less |
Tape and Reel |
|
CSD13381F4T |
250 |
Absolute Maximum Ratings
|
TA = 25°C unless otherwise stated |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
12 |
V |
|
VGS |
Gate-to-Source Voltage |
8 |
V |
|
ID |
Continuous Drain Current, TA = 25°C(1) |
2.1 |
A |
|
IDM |
Pulsed Drain Current, TA = 25°C(2) |
7 |
A |
|
IG |
Continuous Gate Clamp Current |
35 |
mA |
|
Pulsed Gate Clamp Current(2) |
350 |
||
|
PD |
Power Dissipation(1) |
500 |
mW |
|
ESD Rating |
Human Body Model (HBM) |
4 |
kV |
|
Charged Device Model (CDM) |
2 |
kV |
|
|
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, single pulse ID = 7.4 A, L=0.1mH,RG =25Ω |
2.7 |
mJ |
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