CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET
p channel mosfet driver circuit
,mosfet motor control circuit
CSD19532Q5B Mosfet Power Transistor MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET
1 Features
-
Low Thermal Resistance
-
Avalanche Rated
-
Pb-Free Terminal Plating
-
RoHS Compliant
-
Halogen Free
-
SON 5-mm × 6-mm Plastic Package
2 Applications
-
Synchronous Rectifier for Offline and Isolated DC- DC Converters
-
Motor Control
3 Description
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
|
TA = 25°C |
TYPICAL VALUE |
UNIT |
||
|
VDS |
Drain-to-Source Voltage |
100 |
V |
|
|
Qg |
Gate Charge Total (10 V) |
48 |
nC |
|
|
Qgd |
Gate Charge Gate to Drain |
8.7 |
nC |
|
|
RDS(on) |
Drain-to-Source On Resistance |
VGS = 6 V |
4.6 |
mΩ |
|
VGS =10V |
4 |
mΩ |
||
|
VGS(th) |
Threshold Voltage |
2.6 |
V |
|
Ordering Information(1)
|
Device |
Media |
Qty |
Package |
Ship |
|
CSD19532Q5B |
13-Inch Reel |
2500 |
SON 5 x 6 mm Plastic Package |
Tape and Reel |
|
CSD19532Q5BT |
13-Inch Reel |
250 |
Absolute Maximum Ratings
|
TA = 25°C |
VALUE |
UNIT |
|
|
VDS |
Drain-to-Source Voltage |
100 |
V |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current (Package limited) |
100 |
A |
|
Continuous Drain Current (Silicon limited), TC = 25°C |
140 |
||
|
Continuous Drain Current(1) |
17 |
||
|
IDM |
Pulsed Drain Current(2) |
400 |
A |
|
PD |
Power Dissipation(1) |
3.1 |
W |
|
Power Dissipation, TC = 25°C |
195 |
||
|
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 |
°C |
|
EAS |
Avalanche Energy, single pulse ID =74A,L=0.1mH,RG =25Ω |
274 |
mJ |
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