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Home > products > Flash Memory IC Chip > TXB0108DQSR Programmable Logic ICS Voltage Levels 8B Bidir Vltg-Level Translator

TXB0108DQSR Programmable Logic ICS Voltage Levels 8B Bidir Vltg-Level Translator

manufacturer:
Manufacturer
Description:
Voltage Level Translator Bidirectional 1 Circuit 8 Channel 100Mbps 20-USON (4x2)
Category:
Flash Memory IC Chip
Price:
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Payment Method:
Paypal, Western Union, TT
Specifications
Unit Weight:
0.000402 Oz
Subcategory:
Logic ICs
Product Type:
Translation - Voltage Levels
Low Level Output Current:
50 MA
High Level Output Current:
50 MA
Logic Type:
Voltage Level Translator
Highlight:

logic integrated circuits

,

programmable logic array ic

Introduction

TXB0108DQSR Programmable Logic ICS Voltage Levels 8B Bidir Vltg-Level Translator

 

1 Features

  • 1.2Vto3.6VonAPortand1.65Vto5.5Von B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State

  • OE Input Circuit Referenced to VCCA

  • Low Power Consumption, 4-μA Max ICC

  • Ioff Supports Partial-Power-Down Mode Operation

  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

  • ESD Protection Exceeds JESD 22

 

2 Applications

  • Handset

  • Smartphone

  • Tablet

  • Desktop PC

 

3 Description

This 8-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0108 is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power-up or power-down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

Device Information

PART NUMBER

PACKAGE

BODY SIZE (NOM)

TXB0108

TVSOP (20)

5.00 mm x 4.40 mm

SON (20)

2.00 mm x 4.00 mm

BGA MICROSTAR JUNIOR (20)

2.50 mm x 3.00 mm

TSSOP (20)

6.50 mm x 4.40 mm

VQFN (20)

4.50 mm x 3.50 mm

DSGBA (20)

1.90 mm x 2.40 mm

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