Send Message
Home > products > Flash Memory IC Chip > TXS0108EPWR 3.6 V Programmable Logic ICS Voltage Levels 4B Open Drain 1.2 Mbps

TXS0108EPWR 3.6 V Programmable Logic ICS Voltage Levels 4B Open Drain 1.2 Mbps

manufacturer:
Manufacturer
Description:
Voltage Level Translator Bidirectional 1 Circuit 8 Channel 60Mbps 20-TSSOP
Category:
Flash Memory IC Chip
Price:
Contact us
Payment Method:
Paypal, Western Union, TT
Specifications
Supply Voltage - Min:
1.2 V
Supply Voltage - Max:
3.6 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Data Rate:
60 Mb/s
Operating Temperature Range:
- 40 C To + 85 C
Highlight:

logic integrated circuits

,

programmable logic array ic

Introduction

TXS0108EPWR Programmable Logic ICS Voltage Levels 4B Bidirec Vltg- Level Translator

 

1 Features

  • No Direction-Control Signal Needed
  • Maximum Data Rates
  • – 110 Mbps (Push Pull)
  • – 1.2 Mbps (Open Drain)
  • 1.2Vto3.6VonAPortand1.65Vto5.5VonB Port (VCCA ≤ VCCB)
  • No Power-Supply Sequencing Required – Either VCCA or VCCB Can Be Ramped First
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22 (A Port)
  • – 2000 V Human Body Model (A114-B)
  • – 150 V Machine Model (A115-A)
  • – 1000 V Charged-Device Model (C101)
  • IEC 61000-4-2 ESD (B Port)
  • – ±8 kV Contact Discharge
  • – ±6 kV Air-Gap Discharge

 

2 Applications

  • Handsets

  • Smartphones

  • Tablets

  • Desktop PCs

 

3 Description

This 8-bit non-inverting translator uses two separate configurable power-supply rails. The A port tracks the VCCA pin supply voltage. The VCCA pin accepts any supply voltage between 1.2 V and 3.6 V. The B port tracks the VCCB pin supply voltage. The VCCB pin accepts any supply voltage between 1.65 V and 5.5 V. Two input supply pins allows for low Voltage bidirectional translation between any of the 1.2 V, 1.8 V, 2.5 V, 3.3 V, and 5 V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance (Hi-Z) state.

To ensure the Hi-Z state during power-up or power- down periods, tie OE to GND through a pull-down resistor. The minimum value of the resistor is determined by the current-sourcing capability of the driver.

Device Information

PART NUMBER

PACKAGE

BODY SIZE (NOM)

TXS0108EPW

TSSOP (20)

6.50 mm × 6.40 mm

TXS0108ERGY

VQFN (20)

4.50 mm × 3.50 mm

TXS0108EZXY

UFBGA (20)

3.00 mm × 2.50 mm

Related Products
Image Part # Description
W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI

W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI

FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns 8-WSON (8x6)
PF48F4400P0VBQEK NEW AND ORIGINAL STOCK

PF48F4400P0VBQEK NEW AND ORIGINAL STOCK

FLASH - NOR (MLC) Memory IC 512Mbit CFI 52 MHz 110 ns 64-LBGA (11x13)
DSPIC30F3011-30I/PT Flash Memory IC NEW AND ORIGINAL STOCK

DSPIC30F3011-30I/PT Flash Memory IC NEW AND ORIGINAL STOCK

dsPIC dsPIC™ 30F Microcontroller IC 16-Bit 30 MIPs 24KB (8K x 24) FLASH 44-TQFP (10x10)
IR2110PBF NEW AND ORIGINAL STOCK

IR2110PBF NEW AND ORIGINAL STOCK

Half-Bridge Gate Driver IC Non-Inverting 14-DIP
S25FL032P0XMFI010 SOP8 104MHz Flash Memory IC Chip

S25FL032P0XMFI010 SOP8 104MHz Flash Memory IC Chip

FLASH - NOR Memory IC 32Mbit SPI - Quad I/O 104 MHz 8-SOIC
W25Q80DVSNIG Serial Flash Chip 3V 8M BIT Dual Quad Spi Memory Integrated Circuit

W25Q80DVSNIG Serial Flash Chip 3V 8M BIT Dual Quad Spi Memory Integrated Circuit

FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 104 MHz 8-SOIC
MOS Tube Field Effect Single-Chip Drive PWM Controlador Module IRF520

MOS Tube Field Effect Single-Chip Drive PWM Controlador Module IRF520

N-Channel 100 V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
MAX485, RS485 Module TTL To RS-485 Module TTL To 485

MAX485, RS485 Module TTL To RS-485 Module TTL To 485

1/1 Transceiver Half RS422, RS485 8-uMAX/uSOP
SKY65336-11 NEW AND ORIGINAL STOCK

SKY65336-11 NEW AND ORIGINAL STOCK

RF Front End 2.4GHz ISM 28-MCM (8x8)
Send RFQ
Stock:
MOQ:
Contact us