ADR441BRZ ADR441BRZ-REEL7 Power Path Management IC Voltage References LDO 2.5V w/ Crnt Sink & Srce
battery charge management ic
,power management integrated circuit
ADR441BRZ ADR441BRZ-REEL7 Power Path Management IC Voltage References LDO 2.5V w/ Crnt Sink & Srce
FEATURES
- Ultralow voltage noise (0.1 Hz to 10 Hz): 1.2 μV p-p
- Superb temperature drift: 5 ppm/°C
- Low dropout operation (supply voltage headroom): 500 mV Supply voltage operating range: 3 V to 18 V
- High output source and sink current
- +10 mA and −5 mA, respectively
- ENHANCED PRODUCT FEATURES
- Supports defense and aerospace applications (AQEC standard)
- Military temperature range (−55°C to +125°C) Controlled manufacturing baseline
- 1 assembly/test site
- 1 fabrication site
- Product change notification Qualification data available on request
APPLICATIONS
- Precision data acquisition systems High resolution data converters Battery-powered instrumentation Precision instruments
- Military communication Unmanned systems Avionics
GENERAL DESCRIPTION
The ADR441-EP1 is a XFET® voltage reference featuring ultralow noise, high accuracy, and low temperature drift performance. Using Analog Devices, Inc., temperature drift curvature correction and extra implanted junction FET (XFET) technology, voltage change vs. temperature nonlinearity in the ADR441-EP is greatly minimized.
The XFET reference offers better noise performance than buried Zener references, and the XFET reference operates off
low supply voltage headroom (500 mV). This combination of features makes the ADR441-EP ideally suited for precision signal conversion applications in high end data acquisition systems, military communication, and avionics applications.
The ADR441-EP has the capability to source up to +10 mA of output current and sink up to −5 mA. The device also comes with a trim terminal to adjust the output voltage over a 0.5% range without compromising performance.
The ADR441-EP is available in an 8-lead, narrow SOIC package. The ADR441-EP is specified over the military temperature range of −55°C to +125°C. Additional application and technical information can be found in the ADR441 data sheet.
W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI
PF48F4400P0VBQEK NEW AND ORIGINAL STOCK
DSPIC30F3011-30I/PT Flash Memory IC NEW AND ORIGINAL STOCK
IR2110PBF NEW AND ORIGINAL STOCK
S25FL032P0XMFI010 SOP8 104MHz Flash Memory IC Chip
W25Q80DVSNIG Serial Flash Chip 3V 8M BIT Dual Quad Spi Memory Integrated Circuit
MOS Tube Field Effect Single-Chip Drive PWM Controlador Module IRF520
MAX485, RS485 Module TTL To RS-485 Module TTL To 485
SKY65336-11 NEW AND ORIGINAL STOCK
| Image | Part # | Description | |
|---|---|---|---|
|
|
W25N01GVZEIG SLC Nand Flash Memory IC 3V 1G BIT Winbond TW SPI |
FLASH - NAND (SLC) Memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns 8-WSON (8x6)
|
|
|
|
PF48F4400P0VBQEK NEW AND ORIGINAL STOCK |
FLASH - NOR (MLC) Memory IC 512Mbit CFI 52 MHz 110 ns 64-LBGA (11x13)
|
|
|
|
DSPIC30F3011-30I/PT Flash Memory IC NEW AND ORIGINAL STOCK |
dsPIC dsPIC™ 30F Microcontroller IC 16-Bit 30 MIPs 24KB (8K x 24) FLASH 44-TQFP (10x10)
|
|
|
|
IR2110PBF NEW AND ORIGINAL STOCK |
Half-Bridge Gate Driver IC Non-Inverting 14-DIP
|
|
|
|
S25FL032P0XMFI010 SOP8 104MHz Flash Memory IC Chip |
FLASH - NOR Memory IC 32Mbit SPI - Quad I/O 104 MHz 8-SOIC
|
|
|
|
W25Q80DVSNIG Serial Flash Chip 3V 8M BIT Dual Quad Spi Memory Integrated Circuit |
FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 104 MHz 8-SOIC
|
|
|
|
MOS Tube Field Effect Single-Chip Drive PWM Controlador Module IRF520 |
N-Channel 100 V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
|
|
|
|
MAX485, RS485 Module TTL To RS-485 Module TTL To 485 |
1/1 Transceiver Half RS422, RS485 8-uMAX/uSOP
|
|
|
|
SKY65336-11 NEW AND ORIGINAL STOCK |
RF Front End 2.4GHz ISM 28-MCM (8x8)
|