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Home > products > Flash Memory IC Chip > TPS54318RTER Power Path Management IC Switching Voltage Regulators 2.95-6Vin,3A,2MHz Synch SD DCDC Cnvrtr

TPS54318RTER Power Path Management IC Switching Voltage Regulators 2.95-6Vin,3A,2MHz Synch SD DCDC Cnvrtr

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Manufacturer
Category:
Flash Memory IC Chip
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Specifications
Manufacturer:
Texas Instruments
Product Category:
Switching Voltage Regulators
Mounting Style:
SMD/SMT
Package / Case:
WQFN-16
Output Voltage:
0.8 V To 4.5 V
Output Current:
3 A
Highlight:

power management integrated circuit

,

battery charge management ic

Introduction

TPS54318RTER Power Path Management IC Switching Voltage Regulators 2.95-6Vin,3A,2MHz Synch SD DCDC Cnvrtr

 

1 Features

  • Two, 30-mΩ (typical) MOSFETs for High- Efficiency at 3-A loads
  • Switching Frequency: 200 kHz to 2 MHz

  • Voltage Reference Over Temperature: 0.8 V ± 1%

  • Synchronizes to External Clock

  • Adjustable Soft Start/Sequencing

  • UV and OV Power-Good Output

  • Low Operating and Shutdown Quiescent Current

  • Safe Start-Up into Prebiased Output

  • Cycle-by-Cycle Current Limit, Thermal and Frequency Foldback Protection

  • Operating Junction Temperature Range: –40°C to 150°C

  • Thermally Enhanced 3 mm × 3 mm 16-pin WQFN Package

  • Create a Custom Design Using the TPS54318 With the WEBENCH® Power Designer

 

2 Applications

  • Low-Voltage, High-Density Power Systems

  • Point-of-Load Regulation for High Performance DSPs, FPGAs, ASICs and Microprocessors

 

3 Description

TheTPS54318 device is a full-featured, 6-V, 3-A, synchronous, step-down current-mode converter with two integrated MOSFETs.

The TPS54318 device enables small designs by integrating the MOSFETs, implementing current mode control to reduce external component count, reducing inductor size by enabling up to 2-MHz switching frequency, and minimizing the device footprint with a small, 3 mm x 3 mm, thermally enhanced, QFN package.

The TPS54318 device provides accurate regulation for a variety of loads with an accurate ±1% voltage reference (VREF) over temperature.

Efficiency is maximized through the integrated 30-mΩ MOSFETs and a 350-μA typical supply current. Using the EN pin, shutdown supply current is reduced to 2 μA by entering a shutdown mode.

Undervoltage lockout is internally set at 2.6 V, but can be increased by programming the threshold with a resistor network on the enable pin. The output voltage startup ramp is controlled by the soft-start pin. An open-drain power-good signal indicates the output is within 93% to 107% of its nominal voltage. Frequency foldback and thermal shutdown protects the device during an overcurrent condition.

For more SWIFTTM documentation, see the TI website at www.ti.com/swift.

Device Information

PART NUMBER PACKAGE BODY SIZE (NOM)
TPS54318 WQFN (16) 3.00 mm × 3.00 mm
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