Silicon NPN General Purpose Amplifier High Voltage Transistor MMBT5551
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 350 mW Surface Mount SOT-23-3
Category:
Flash Memory IC Chip
Price:
Bargain
Payment Method:
T/T
Specifications
Description:
Bipolar Transistors - BJT SOT23,NPN,0.6A,160V,HighVolt
Type:
Bipolar Transistors - BJT
Name:
Transistors
Part Number:
MMBT5551
Package:
SOT-23-3
Small Order:
Welcome
Highlight:
MMBT5551 High Voltage Transistor
,NPN Amplifier High Voltage Transistor
,NPN Silicon High Voltage Transistor
Introduction
SOT-23 - Power Transistor and DarliCM GROUPons
Part number
BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T
CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T
CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551
Electrical Characteristics
|
Mfr. # |
MMBT5551 |
| Mounting Style | SMD/SMT |
| Transistor Polarity | NPN |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 160 V |
| Collector- Base Voltage VCBO | 180 V |
| Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 0.2 V |
| Maximum DC Collector Current | 0.6 A |
| Pd - Power Dissipation | 325 mW |
| Gain Bandwidth Product fT | 300 MHz |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| DC Collector/Base Gain hfe Min | 80 at 10 mA, 5 V |
| DC Current Gain hFE Max | 250 at 10 mA, 5 V |
| Product Type | BJTs - Bipolar Transistors |
Electrical Characteristics (at Ta = 25°C unless otherwise specified)
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Stock:
MOQ:
10 pcs