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Home > products > Electronic IC Chips > IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics

IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics

manufacturer:
Manufacturer
Description:
N-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount D-Pak
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Temperature Range:
-55°C To +175°C
Payment Term:
T/T, Paypal, Western Union
Voltage:
± 16 V
Current:
25A
Package:
TO-252
Factory Package:
REEL
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics

 

IRLR2905TRPBF

±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers

 

Logic-Level Gate Drive 

Ultra Low On-Resistance 

Surface Mount (IRLR2905) 

Straight Lead (IRLU2905) 

Advanced Process Technology

Fast Switching  Fully Avalanche Rated

Lead Free

 

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.



 Absolute Maxim Rating

TC = 25°C Continuous Drain Current, VGS @ 10V 42 ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V 30 A

IDM Pulsed Drain Current 160 PD @TC = 25°C

Power Dissipation 110 W Linear Derating Factor 0.71 W/°C

VGS Gate-to-Source Voltage ± 16 V

EAS Single Pulse Avalanche Energy 210 mJ

IAR Avalanche Current 25 A EAR Repetitive

Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

TJ Operating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

 

A part of stock list

 

INDUTOR 2.2UH NLFC322522T-2R2M-PF TDK Y6438385HU SMD3225
INDUTOR 10UH NLFC322522T-100K-PF TDK Y643780LHU SMD3225
C.I LTC3406ES5-1.8TRPBF LINEAR LTC4 SOT23-5
C.I LTC3406ES5-1.5TRPBF LINEAR LTD6 SOT23-5
C.I SN74HC273DWR TI 87D71RK/85FKF2K SOP-20
RES 0R 5%
RC0805JR-070RL
YAGEO 1645 SMD0805
RES 49R9 1%
RC0805FR-0749R9L
YAGEO 1639 SMD0805
RES 6K8 1%
RC0805FR-076K8L
YAGEO 1633 SMD0805
RES 0R 5%
RC0603JR-070RL
YAGEO 1645 SMD0603
CAP 0805 10UF 16V X5R CL21A106KOQNNNE SAMSUNG AC7JO2H SMD0805
DIODO B330A-13-F DIODES 1522/B330A SMA
C.I MM74C922N FAC BH56AB DIP-18
DIODO BYG23M-E3/TR VISHAY 1632 SMA
C.I CD4052BM96 TI 69P1HQA SOP-16
RES 1210 220R 5% RC1210JR-07220RL YAGEO 1633 SMD1210
RES 1210 330R 5% RC1210JR-07330RL YAGEO 1641 SMD1210
CAP 0805 100NF 16V X7R 0805YC104KAT2A AVX 1622 SMD0805
RES 0805 1K5 1%
RC0805FR-071K5L
YAGEO 1641 SMD0805
RES 0805 3K3 1%
RC0805FR-073K3L
YAGEO 1641 SMD0805
C.I SN74LS373N TI 1606+5 DIP-20
OPTOACOPLADOR 4N25M FSC 629Q DIP-6
RES 0805 4K7 5%
RC0805JR-074K7L
YAGEO 1642 SMD0805
RES 0805 4K99 1%
RC0805FR-074K99L
YAGEO 1643 SMD0805
RES 0805 75R 1%
RC0805FR-0775RL
YAGEO 1643 SMD0805
CAP 0805 220PF 50V NPO 08055A221JAT2A AVX 1633 SMD0805
C.I SSD1961G40 SOLOMON L045AF BGA40
C.I LM336D-2.5 TI 336-25/68MA6EG SOP-8
C.I TPS61041DBVR TI PHPI SOT23-5
DIODO 1N4756A SEMTECH SL0C2P0817Z185G DO-41
C.I CONVERTER
MCP3201-CI/P
MICROCHIP 1621SOD DIP-8
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Stock:
MOQ:
200pcs