TPD4E001DBVR IC Chip Integrated Circuit Chip Program Memory
electronics ic chip
,integrated circuit components
4-CHANNEL ESD PROTECTION ARRAY WITH 1.5-pF IO CAPACITANCE
Features
4-Channel ESD Clamp Array to Enhance
System-Level ESD Protection
• Exceeds IEC61000-4-2 (Level 4) ESD Protection Requirements
– ±8-kV IEC 61000-4-2 Contact Discharge
– ±15-kV IEC 61000-4-2 Air-Gap Discharge
• ±15-kV Human-Body Model (HBM)
• 5.5-A Peak Pulse Current (8/20-us Pulse)
• Low 1.5-pF Input Capacitance
• Low 1-nA (Max) Leakage Current
• 0.9-V to 5.5-V Supply-Voltage Range
• Space-Saving DRL, DBV, DCK, and DRS Package Options
DESCRIPTION/ORDERING INFORMATION
The TPD4E001 is a low-capacitance ±15-kV ESD-protection diode array designed to protect sensitive electronics attached to communication lines. Each channel consists of a pair of diodes that steer ESD current pulses to VCC or GND.
The TPD4E001 protects against ESD pulses up to ±15-kV Human-Body Model (HBM), ±8-kV Contact Discharge, and ±15-kV Air-Gap Discharge, as specified in IEC 61000-4-2. This device has a 1.5-pF IO capacitance per channel, making it ideal for use in high-speed data IO interfaces.
The ultra low leakage current (<1 nA max) is suitable for precision analog measurements in applications like glucose meters, heart rate monitors, etc. The TPD4E001 is available in DRL, DBV (SOT-23), DCK (SC-70), and DRS (QFN) packages and is specified for –40°C to 85°C operation.
| ABSOLUTE MAXIMUM RATINGS(1) |
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VCC –0.3 7 V VI/O
IO voltage tolerance –0.3 VCC + 0.3 V
Tstg Storage temperature range –65 150 °C
TJ Junction temperature 150 °C
Infrared (15 s) 220 Bump temperature (soldering) °C
Vapor phase (60 s) 215
Lead temperature (soldering, 10 s) 300 °C
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