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CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

Minimum Order Quantity : 3000 PCS Price : Negotiation
Packaging Details : 3000PCS/REEL Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 30000PCS
Place of Origin: CHINA Brand Name: CJ
Model Number: CJ2310 S10

Detail Information

Drain-Source Voltage: 60V Gate-Source Voltage: ±20V
Continuous Drain Current: 3A Pulsed Drain Current (note 1): 10A
Power Dissipation: 0.35W Thermal Resistance From Junction To Ambient (note 2): 357℃/W
Junction Temperature: 150℃ Storage Temperature: -55~+150℃
High Light:

resistor equipped transistor


epitaxial planar pnp transistor

Product Description

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS





The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.



High power and current handing capability 

Lead free product is acquired 

Surface mount package




Battery Switch 

DC/DC Converter



Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 3 A
Pulsed Drain Current (note 1) I DM 10 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (note 2) R θJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃





CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet 0





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