Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier
npn smd transistor
,silicon power transistors
Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier
Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V
Power MOSFET IXFQ60N50P3 I D25 = 60A
IXFH60N50P3 RDS(on) ≤ 100mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol | Test Conditions | Maximum Ratings |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ |
500 V 500 V |
VGSS VGSM |
Continuous Transient |
± 30 V ± 40 V |
I D25 I DM |
TC = 25°C TC = 25°C, Pulse Width Limited by TJM |
60 A 150 A |
I A EAS |
TC = 25°C TC = 25°C |
30 A 1 J |
dv/dt | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 35 V/ns |
PD | TC = 25°C | 1040 W |
TJ TJM Tstg |
-55 ... +150 °C 150 °C -55 ... +150 °C |
|
TL Tsold |
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds |
300 °C 260 °C |
Md | Mounting Torque (TO-247 & TO-3P) | 1.13 / 10 Nm/lb.in. |
Weight |
TO-268 TO-3P TO-247 |
4.0 g 5.5 g 6.0 g |
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters z Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature
Fig. 5. RDS(on) Normalized to ID = 30A Value vs. 6. Maximum Drain Current vs. Case Drain CurrentFig. Temperature
Fig. 7. Input Admittance Fig. 8. Transconductance
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