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Home > products > Power Management ICs > IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

manufacturer:
Manufacturer
Description:
MOSFET N-CH 55V 3.1A SOT223
Category:
Power Management ICs
Price:
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Specifications
Pulsed Drain Current:
12 A
Linear Derating Factor:
8.3 MW/°C
Gate-to-Source Voltage:
±16 V
Single Pulse Avalanche Energy:
120 MJ
Avalanche Current:
3.1 A
Junction And Storage Temperature:
-55 To + 150 °C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

IRLL024NPbF HEXFET® Power MOSFET

 

  • Surface Mount 
  • Advanced Process Technology 
  • Ultra Low On-Resistance 
  • Dynamic dv/dt Rating 
  • Fast Switching 
  • Fully Avalanche Rated 
  • Lead-Free

 

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

 

Absolute Maximum Ratings

  Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.4 A
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.1 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.5 A
IDM Pulsed Drain Current 12 A
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
  Linear Derating Factor (PCB Mount)* 8.3 mW/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 120 mJ
IAR Avalanche Current 3.1 A
EAR Repetitive Avalanche Energy* 0.1 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

 

 

 

 

 

 

Stock Offer (Hot Sell)

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TP0606N3-G 11068 MICROCHIP 16+ TO-92
VN0104N3-G 11252 MICROCHIP 14+ TO-92
VN2410L-G 11436 MICROCHIP 13+ TO-92
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S1102EUA-T 11876 SEC 16+ TO-92
STBV32-AP 27500 ST 16+ TO-92
STX83003 16232 ST 05+ TO-92
TL1431IZ 17276 ST 10+ TO-92
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PXT2222A 15674 16+ TO-89
STRX6757 2324 SANKEN 16+ TO3P-7
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STR30130 13928 SK 16+ TO3P-5
STD03P/STD03N 1000 SANKEN 14+ TO-3P-4
SSH22N50A 12510 FSC 13+ TO-3P
TIP35C 18012 KEC 16+ TO-3P
S30D45C 2940 MOSPEC 16+ TO-3P
SSH40N20 17268 SEC 16+ TO-3P
SGL160N60UFD 1439 FAIRCHILD 14+ TO-264
SPX29152T5-L 7756 EXAR 06+ TO-263-5
SP1086V1-L-3-3/TR 7516 SIPEX/EXA 10+ TO-263-3L
LT1963E#PBF 1652 LINEAR 15+ TO-263/5
14CL40 24324 FAIRCHILD 14+ TO-263

 

 

 

 

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