IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF
manufacturer:
Infineon
Description:
IGBT NPT 600 V 22 A 156 W Through Hole TO-220AB
Category:
IGBT Power Module
Price:
To be negotiated
Payment Method:
T/T, Western Union,paypal
Specifications
PN:
IRGB10B60KDPBF
Brand:
INFINEON/IR
Original:
Germany
Type:
Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode
Voltage:
IGBT 600V 22A 156W
Package:
TO220AB
Highlight:
156W Insulated Gate Bipolar Transistor
,22A Insulated Gate Bipolar Transistor
,IGBT Bipolar Recovery Diode
Introduction
IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT
600V 22A 156W TO220AB
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
| Part Number | IRGB10B60KDPBF |
| Manufacturer | Infineon |
| Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer | Infineon |
| Packaging | Tube |
| Original | Germany |
| Part Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 22A |
| Current - Collector Pulsed (Icm) | 44A |
| Vce(on) (Max) @ Vge Ic | 2.2V @ 15V 10A |
| Power - Max | 156W |
| Switching Energy | 140µJ (on) 250µJ (off) |
| Input Type | Standard |
| Gate Charge | 38nC |
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Stock:
MOQ:
5-10pcs