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IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB

Minimum Order Quantity : 10 PCS Price : Negotiation
Packaging Details : TUBE Delivery Time : STOCK
Payment Terms : T/T, Western Union , ESCROW Supply Ability : 10000PCS
Place of Origin: CHINA Brand Name: IR
Model Number: IRF640N

Detail Information

Categories: Transistors - FETs, MOSFETs - Single Technology: MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150 MOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
High Light:

high current schottky diode


low power zener diode

Product Description

IRF640N General Purpose Rectifier Diode N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-220AB


 Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. 1





Product Attributes Select All
Categories Discrete Semiconductor Products
  Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1160pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB



IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB 0IRF640N Metal Oxide Surface Mount Schottky Diode Schottky Diode Rectifier TO 220AB 1





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