IR21531S Electronic IC Chips SELF-OSCILLATING HALF-BRIDGE DRIVER
electronic integrated circuit
,linear integrated circuits
IR21531D(S) & (PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature (1/6th Vcc) on CT pin
• Increased undervoltage lockout Hysteresis (1V)
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• Low side output in phase with RT
• Internal 50nsec (typ.) bootstrap diode (IR21531D)
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Also available LEAD_FREE
Description
The IR21531(D)(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal.
In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol | Definition | Min. | Max. | Units | |
---|---|---|---|---|---|
VB | High side floating supply voltage | -0.3 | 625 | V | |
VS | High side floating supply offset voltage | VB - 25 | VB + 0.3 | V | |
VHO | High side floating output voltage | VS - 0.3 | VB + 0.3 | V | |
VLO | Low side output voltage | -0.3 | VCC + 0.3 | V | |
VRT | RT pin voltage | -0.3 | VCC + 0.3 | V | |
VCT | CT pin voltage | -0.3 | VCC + 0.3 | V | |
ICC | Supply current (note 1) | -- | 25 | mA | |
IRT | RT pin current | -5 | 5 | mA | |
dVs/dt | Allowable offset voltage slew rate | -50 | 50 | V/ns | |
PD | Maximum power dissipation @ TA ≤ +25°C | (8 Lead DIP) | -- | 1.0 | W |
(8 Lead SOIC) | -- | 0.625 | W | ||
RthJA | Thermal resistance, junction to ambient | (8 Lead DIP) | -- | 125 | °C/W |
(8 Lead SOIC) | -- | 200 | °C/W | ||
TJ | Junction temperature | -55 | 150 | °C | |
TS | Storage temperature | -55 | 150 | °C | |
TL | Lead temperature (soldering, 10 seconds) | -- | 300 | °C |
Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section.
Stock Offer (Hot Sell)
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