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Home > products > Integrated Circuit Chips > PIC16F628A-I/SO Electronic IC Chips FLASH-Based 8-Bit CMOS Microcontrollers

PIC16F628A-I/SO Electronic IC Chips FLASH-Based 8-Bit CMOS Microcontrollers

manufacturer:
Manufacturer
Description:
PIC PIC® 16F Microcontroller IC 8-Bit 20MHz 3.5KB (2K x 14) FLASH 18-SOIC
Category:
Integrated Circuit Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Ambient Temperature Under Bias:
-40 To +125°C
Storage Temperature:
-65°C To +150°C
Voltage On VDD With Respect To VSS:
-0.3 To +6.5V
Voltage On MCLR And RA4 With Respect To VSS:
-0.3 To +14V
Voltage On All Other Pins With Respect To VSS:
-0.3V To VDD + 0.3V
Total Power Dissipation:
800 MW
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electronic integrated circuit

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linear integrated circuits

Introduction

 

PIC16F627A/628A/648A

FLASH-Based 8-Bit CMOS Microcontrollers

 

18-pin FLASH-Based 8-Bit CMOS Microcontrollers

 

High Performance RISC CPU:

• Operating speeds from DC - 20 MHz

• Interrupt capability

• 8-level deep hardware stack

• Direct, Indirect and Relative Addressing modes

• 35 single word instructions

  - All instructions single cycle except branches

 

Special Microcontroller Features:

• Internal and external oscillator options

  - Precision Internal 4 MHz oscillator factory calibrated to ±1%

  - Low Power Internal 37 kHz oscillator

  - External Oscillator support for crystals and resonators.

• Power saving SLEEP mode

• Programmable weak pull-ups on PORTB

• Multiplexed Master Clear/Input-pin

• Watchdog Timer with independent oscillator for reliable operation

• Low voltage programming

 

• In-Circuit Serial Programming™ (via two pins)

• Programmable code protection

• Brown-out Reset

• Power-on Reset

• Power-up Timer and Oscillator Start-up Timer

• Wide operating voltage range. (2.0 - 5.5V)

• Industrial and extended temperature range

• High Endurance FLASH/EEPROM Cell

  - 100,000 write FLASH endurance

  - 1,000,000 write EEPROM endurance

  - 100 year data retention

 

Low Power Features:

• Standby Current:

  - 100 nA @ 2.0V, typical

• Operating Current:

  - 12 µA @ 32 kHz, 2.0V, typical

  - 120 µA @ 1 MHz, 2.0V, typical

• Watchdog Timer Current

  - 1 µA @ 2.0V, typical

• Timer1 oscillator current:

  - 1.2 µA @ 32 kHz, 2.0V, typical

• Dual Speed Internal Oscillator:

  - Run-time selectable between 4 MHz and 37 kHz

  - 4 µs wake-up from SLEEP, 3.0V, typical

 

Peripheral Features:

• 16 I/O pins with individual direction control

• High current sink/source for direct LED drive

• Analog comparator module with:

  - Two analog comparators

  - Programmable on-chip voltage reference (VREF) module

  - Selectable internal or external reference

  - Comparator outputs are externally accessible

 

• Timer0: 8-bit timer/counter with 8-bit programmable prescaler

• Timer1: 16-bit timer/counter with external crystal/ clock capability

• Timer2: 8-bit timer/counter with 8-bit period register, prescaler and postscaler

• Capture, Compare, PWM module

  - 16-bit Capture/Compare

  - 10-bit PWM

• Addressable Universal Synchronous/Asynchronous Receiver/Transmitter USART/SCI

 

Absolute Maximum Ratings†

Ambient temperature under bias.............................................................................-40 to +125°C

Storage temperature ......................................................................................... -65°C to +150°C

Voltage on VDD with respect to VSS ........................................................................ -0.3 to +6.5V

Voltage on MCLR and RA4 with respect to VSS ........................................................-0.3 to +14V

Voltage on all other pins with respect to VSS ................................................-0.3V to VDD + 0.3V

Total power dissipation(1) ................................................................................................800 mW

Maximum current out of VSS pin .......................................................................................300 mA

Maximum current into VDD pin ..........................................................................................250 mA

Input clamp current, IIK (VI < 0 or VI > VDD)...................................................................... ± 20 mA

Output clamp current, IOK (Vo < 0 or Vo >VDD)................................................................. ± 20 mA

Maximum output current sunk by any I/O pin..........................................................................25 mA

Maximum output current sourced by any I/O pin ....................................................................25 mA

Maximum current sunk by PORTA and PORTB (Combined)..................................................200 mA

Maximum current sourced by PORTA and PORTB (Combined).............................................200 mA


Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - ∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

 

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

 

Note: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latchup. Thus, a series resistor of 50-100 Ω should be used when applying a “low” level to the MCLR pin rather than pulling this pin directly to VSS.

 

 

 

 

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