TLP155(E Electronic integrated circuit Chips Photocouplers GaA As Infrared LED & Photo IC
electronic integrated circuit
,linear integrated circuits
Photocouplers GaAℓAs Infrared LED & Photo IC TLP155
Applications
• Plasma Display Panels (PDPs)
• Transistor Inverters
• MOSFET Gate Drivers
• IGBT Gate Drivers
General
The Toshiba TLP155 consists of a GaAℓAs infrared light-emitting diodes and integrated high gain, high-speed photodetectors. The TLP155 is housed in the SO6 package. The photodetector has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/µ. TLP155 is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
Features
(1) Buffer logic type (Totem pole output)
(2) Package type: SO6
(3) Output peak current: ±0.6 A (max)
(4) Operating temperature: -40 to 100℃
(5) Threshold input current: 7.5 mA (max)
(6) Propagation delay time: tpHL/tpLH = 200 ns (max)
(7) Common-mode transient immunity: ±20 kV/µs (min)
(8) Propagation delay skew: ±85 ns(max)
(9) Isolation voltage: 3750 Vrms (min)
Packaging and Pin Assignment
Internal Circuit (Note)
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25℃)
| Characteristics | Symbol | Note | Rating | Unit | |
|---|---|---|---|---|---|
| LED | Input forward current | IF | 20 | mA | |
| Input forward current derating (Ta ≥ 92℃) | ∆IF/∆T | 0.63 | mA/℃ | ||
| Peak transient input forward current | IFPT | (Note 1) | 1 | A | |
| Input reverse voltage | VR | 5 | V | ||
| Junction temperature | Tj | 125 | ℃ | ||
| Detector | Peak high-level output current (Ta = -40 to 100℃) | IOPH | (Note 2) | -0.6 | A |
| Peak low-level output current (Ta = -40 to 100℃) | IOPL | (Note 2) | +0.6 | A | |
| Output voltage | VO | 35 | V | ||
| Supply voltage | VCC | 35 | V | ||
| Junction temperature | Tj | 125 | ℃ | ||
| Common | Operating temperature | Topr | -40 to 100 | ℃ | |
| Storage temperature | Tstg | -55 to 125 | ℃ | ||
| Lead soldering temperature (10 s) | Tsol | 260 | ℃ | ||
| Isolation voltage AC, 1 min, R.H. ≤ 60%, Ta = 25℃ | BVS | (Note 3) | 3750 | Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 1 µs, 300 pps
Note 2: Exponential waveform. Pulse width ≤ 2 µs, f ≤ 10 kHz, VCC = 20V, Ta = -40 to 100℃
Note 3: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together.
Stock Offer (Hot Sell)
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