NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts electronic ic chip N−Channel Enhancement Mode Dual SO−8 Package
manufacturer:
ON Semi / Catalyst Semi
Description:
Mosfet Array 20V 3.92A 730mW Surface Mount 8-SOIC
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain−to−Source Voltage:
20 V
Operating And Storage Temperature Range:
−55 To +150°C
Drain−to−Gate Voltage:
20 V
Maximum Lead Temperature:
260°C
Highlight:
thyristor diode module
,low voltage power mosfet
Introduction
NTMD6N02R2G Power MOSFET Transistors 6.0 Amps, 20 Volts
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SOIC−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SOIC−8 Mounting Information Provided
• Pb−Free Package is Available
Applications
• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery−Powered Products, for example, Computers, Printers, Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage | VDSS | 20 | V |
| Drain−to−Gate Voltage (RGS = 1.0 M) | VDGR | 20 | V |
| Gate−to−Source Voltage − Continuous | VGS | 12 | V |
| Thermal Resistance, Junction−to−Ambient Total Power Dissipation Continuous Drain Current@ TA = 25°C Continuous Drain Current@ TA = 70°C Pulsed Drain Current |
RJA PD ID ID IDM |
62.5 2.0 6.5 5.5 50 |
°C/W W A A A |
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued)
| Rating | Symbol | Value | Unit |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 ) | EAS | 360 | mJ |
| Maximum Lead Temperature for Soldering Purposes for 10 seconds | TL | 260 | °C |
Stock Offer (Hot Sell)
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Stock:
MOQ:
1pcs