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FSBB30CH60F Mosfet Power Module thyristor diode Smart Power Module

manufacturer:
ON Semi / Catalyst Semi
Description:
Power Driver Module IGBT 3 Phase 600 V 30 A 27-PowerDIP Module (1.205", 30.60mm)
Category:
IGBT Power Module
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Supply Voltage:
450 V
Supply Voltage (Surge):
500 V
Collector-emitter Voltage:
600 V
Each IGBT Collector Current:
30 A
Collector Dissipation:
103 W
Operating Junction Temperature:
-20 ~ 125 °C
Highlight:

low voltage power mosfet

,

hybrid inverter circuit

Introduction

 

FSBB30CH60F Mosfet Power Module thyristor diode Smart Power Module

 

Features

• UL Certified No.E209204(SPM27-EA package)

• Very low thermal resistance due to using DBC

• 600V-30A 3-phase IGBT inverter bridge including control ICs for gate driving and protection

• Divided negative dc-link terminals for inverter current sensing applications

• Single-grounded power supply due to built-in HVIC

• Isolation rating of 2500Vrms/min.

 

Applications

• AC 100V ~ 253V three-phase inverter drive for small power ac motor drives

• Home appliances applications like air conditioner and washing machine.

 

General Description

It is an advanced smart power module (SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting lowpower inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection. The high speed built-in HVIC provides optocoupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals.

 

Integrated Power Functions

• 600V-30A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

 

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs:

Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection 

 

• For inverter low-side IGBTs:

Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

 

• Fault signaling: Corresponding to a UV fault (Low-side supply)

• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input

 

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Symbol Parameter Conditions Rating Units
VPN Supply Voltage Applied between P- NU, NV, NW 450 V
VPN(Surge) Supply Voltage (Surge) Applied between P- NU, NV, NW 500 V
VCES Collector-emitter Voltage   600 V
± IC Each IGBT Collector Current TC = 25°C 30 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 60 A
PC Collector Dissipation TC = 25°C per One Chip 103 W
TJ Operating Junction Temperature (Note 1) -20 ~ 125 °C

Note:

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)

 

 

 

Pin Configuration

 

 

Internal Equivalent Circuit and Input/Output Pins

 

 

 

 

 

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