FGL40N120ANDTU Mosfet Power Module complementary silicon power transistors
manufacturer:
Manufacturer
Description:
IGBT
Category:
IGBT Power Module
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Emitter Voltage:
1200 V
Gate-Emitter Voltage:
±25 V
Pulsed Collector Current:
120 A
Diode Maximum Forward Current:
240 A
Operating Junction Temperature:
-55 To +150 °C
Storage Temperature:
-55 To +150 °C
Highlight:
low voltage power mosfet
,hybrid inverter circuit
Introduction
FGL40N120AND
1200V NPT IGBT
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
Absolute Maximum Ratings
| Symbol | Parameter | FGL40N120AND | Units |
| VCES | Collector-Emitter Voltage | 1200 | V |
| VGES | Gate-Emitter Voltage | ±25 | V |
| IC | Collector Current @TC = 25°C | 64 | A |
| Collector Current @TC = 100°C | 40 | A | |
| ICM(1) | Pulsed Collector Current | 120 | A |
| IF | Diode Continuous Forward Current @TC = 100°C | 40 | A |
| IFM | Diode Maximum Forward Current | 240 | A |
| PD | Maximum Power Dissipation @TC = 25°C | 500 | W |
| Maximum Power Dissipation @TC = 100°C | 200 | W | |
| SCWT | Short Circuit Withstand Time, VCE = 600V, VGE = 15V, TC = 125°C | 10 | µs |
| TJ | Operating Junction Temperature | -55 to +150 | °C |
| TSTG | Storage Temperature Range | -55 to +150 | °C |
| TL |
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 seconds |
300 | °C |
Notes: (1) Pulse width limited by max. junction temperature
Stock Offer (Hot Sell)
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Stock:
MOQ:
20pcs