IRF740PBF-BE3 CHANNEL TO-220 Power MOSFET dual power mosfet
manufacturer:
Manufacturer
Description:
N-Channel 400 V 10A (Tc) 125W (Tc) Through Hole TO-220AB
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Drain-source Voltage (VGS = 0):
400 V
Drain- Gate Voltage (RGS = 20 KΩ):
400 V
Gate-source Voltage:
± 20 V
Drain Current (continuous) At Tc = 25 OC:
10 A
Drain Current (continuous) At Tc = 100 O C:
6.3 A
Highlight:
npn smd transistor
,silicon power transistors
Introduction
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IRF740 N - CHANNEL TO-220 Power MOSFET dual power mosfet
■ TYPICAL RDS(on) = 0.48 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL,
AND LIGHTING EQUIPMENT.
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MOQ:
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