Send Message
Home > products > Electronic IC Chips > STP10NK70ZFP electrical ic Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET

STP10NK70ZFP electrical ic Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET

manufacturer:
Manufacturer
Description:
N-Channel 700 V 8.6A (Tc) 35W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage (VGS = 0):
700 V
Drain-gate Voltage (RGS = 20 KΩ):
700 V
Gate- Source Voltage:
± 30 V
Gate Source ESD(HBM-C=100pF, R=1.5KΩ):
4000 KV
Peak Diode Recovery Voltage Slope:
4.5 V/ns
Storage Temperature:
-55 To 150 °C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

 
STP10NK70Z STP10NK70ZFP
N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET
 

TYPEVDSSRDS(on)IDPw

STP10NK70Z

STP10NK70ZFP

700 V

700 V

< 0.85 Ω

< 0.85 Ω

8.6 A

8.6 A

150 W

35 W

■ TYPICAL RDS(on) = 0.75 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
 
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
 
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
 
ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
STP10NK70ZSTP10NK70ZFP
VDSDrain-source Voltage (VGS = 0)700V
VDGRDrain-gate Voltage (RGS = 20 kΩ)700V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C8.68.6 (*)A
IDDrain Current (continuous) at TC = 100°C5.45.4 (*)A
IDM (•)Drain Current (pulsed)3434 (*)A
PTOTTotal Dissipation at TC = 25°C15035W
 Derating Factor1.200.28W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4000KV
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150 

°C

°C

(•) Pulse width limited by safe operating area
(1) ISD ≤8.6A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
 
 
 
Stock Offer (Hot Sell)

Part NO.Q'tyMFGD/CPackage
MTD1361F7506SHINDENGE10+HSOP
8050HQLT1G10000ON15+SOT23
L6470HTR1299ST14+TSSOP
LM5576MHX2483NSC14+TSSOP-20
LT3971EMSE-5#PBF3866LT16+MSOP
MOC3063SR2M5567FSC14+SOP
OPA4141AID7700TI12+SOP
PC2SD11NTZAK11300SHARP13+DIP
MMBT2907A-7-F20000DIODES16+SOT-23
MCP1700T-3302E/TT10000MICROCHIP16+SOT-23
PIC10F202T-I/OT8950MICROCHIP16+SOT
LM2936MX-5.03000NSC15+SOP-8
PIC24FJ64GA004-I/PT4138MICROCHIP15+TQFP
PCF8591T13260PHILIPS16+SOP
MD1211LG-G5830SUPERTEX16+QFN
NDS332P40000FAIRCHILD16+SOT-23
NCP1117STAT3G10000ON16+SOT-223
SAK-XC164CM-16F40FBA500 13+LQFP-64
ZTX1053A3980ZETEX13+TO-92S
M29F200BB-70N63841ST16+TSSOP
OPA347NA7440TI14+SOT23-5

 
 
 
 
 

Related Products
Image Part # Description
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

Diode 60 V 1A Surface Mount SOD-123W
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

Diode 40 V 3A Surface Mount DO-214AC, SMA
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
Send RFQ
Stock:
MOQ:
10pcs