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Home > products > Electronic IC Chips > BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

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Specifications
Thermal Resistance Junction To Ambient:
60 K/W
Average On-state Current:
7.5 A
RMS On-state Current:
12 A
Non-repetitive Peak On-state Current:
100 A
Storage Temperature:
-40 To 150 ˚C
Operating Junction Temperature:
125 ˚C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

 
Thyristors                                                            
BT151 series
 
GENERAL DESCRIPTION
Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
 
  PINNING - TO220AB                     PIN CONFIGURATION                  SYMBOL
 
 
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VDRM, VRRMRepetitive peak off-state voltages -

-500R

5001

-650R

6501

-800R

800

V
IT(AV)Average on-state currenthalf sine wave; Tmb ≤ 109 ˚C-7.5A
IT(RMS)RMS on-state currentall conduction angles-12A
ITSMNon-repetitive peak on-state currenthalf sine wave; Tj = 25 ˚C prior to surge-  
I2 tI2 t for fusing

t = 10 ms

t = 8.3 ms

t = 10 ms

-

100

110

50

A

A

A2 s

dIT/dtRepetitive rate of rise of on-state current after triggering

ITM = 20 A; IG = 50 mA;

dIG/dt = 50 mA/µs

-50A/µs
IGMPeak gate current -2A
VGMPeak gate voltage -5V
VRGMPeak reverse gate voltage -5V
PGMPeak gate power -5W
PG(AV)Average gate powerover any 20 ms period-0.5W
TstgStorage temperature -40150˚C
Tj Operating junction temperature -125˚C

 
MECHANICAL DATA
 
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
 
 
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