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Home > products > Electronic IC Chips > N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP

N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP

manufacturer:
Manufacturer
Description:
N-Channel 800 V 9A (Tc) 40W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage:
800 V
Drain-gate Voltage:
800 V
Gate- Source Voltage:
± 30 V
Peak Diode Recovery Voltage Slope:
4.5 V/ns
Operating Junction Temperature:
-55 To 150°C
Storage Temperature:
-55 To 150°C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

 
STP10NK80Z - STP10NK80ZFP
STW10NK80Z
 
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
 

TYPEVDSSRDS(on)IDPw

STP10NK80Z

STP10NK80ZFP

STW10NK80Z

800 V

800 V

800 V

< 0.90 Ω

< 0.90 Ω

< 0.90 Ω

9 A

9 A

9 A

160 W

40 W

160 W

 
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
 
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
 
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
 
ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
STP10NK80ZSTP10NK80ZFPSTW10NK80Z
VDSDrain-source Voltage (VGS = 0)800V
VDGRDrain-gate Voltage (RGS = 20 kΩ)800V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C99 (*)9A
IDDrain Current (continuous) at TC = 100°C66 (*)6A
IDM (•)Drain Current (pulsed)3636 (*)36A
PTOTTotal Dissipation at TC = 25°C16040160W
 Derating Factor1.280.321.28W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4KV
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
 
 
 
Stock Offer (Hot Sell)

Part NO.Q'tyMFGD/CPackage
LB12406500ON14+DIP18
A4982SLPTR-T6500ALLEGRO15+TSSOP-24
ADS1110A0IDBVR6494TI15+SOT23-6
AD8655ARZ6490AD15+SOP-8
MAX3072EESA+6489MAXIM13+SOP
ATMEGA32-16AU6489ATMEL15+QFP44
MAX3100CEE+6481MAXIM14+SSOP
MAX4714EXT6480MAXIM15+SOT
AD8676ARZ6476AD15+SOP-8
LA79116475SANYO15+DIP-16
ADP1710AUJZ-R76462AD14+SOT23
LA36006450SANYO10+DIP-16
L6221C6425ST13+DIP-16
MAX8211ESA+6419MAXIM13+SOP
PIC10F222T-I/OT6409MICROCHIP14+SOT
LT3572EUF#PBF6408LINEAR14+QFN
L293B6400ST12+DIP16
MAX3077EESA6390MAXIM12+SOP
MBI5039GP6387MBI15+SSOP
MPC801KG6375BB14+DIP
PIC16F1828-I/SS6374MICROCHIP15+SSOP

 
 
 

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