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Home > products > Electronic IC Chips > N channel Zener protected Super MESHTM Power MOSFET , STF13NK50Z

N channel Zener protected Super MESHTM Power MOSFET , STF13NK50Z

manufacturer:
Manufacturer
Description:
N-Channel 500 V 11A (Tc) 30W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
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Payment Method:
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Specifications
Drain-source Voltage:
500 V
Gate-source Voltage:
± 30 V
Drain Current (continuous) At TC = 25 °C:
11 A
Drain Current (pulsed):
44 A
Peak Diode Recovery Voltage Slope:
4.5 V/ns
Operating Junction Temperature:
-55 To 150 °C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

 
STF13NK50Z, STP13NK50Z, STW13NK50Z
 
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
 
Features

Type VDSS RDS(on) max ID Pw
STF13NK50Z 500 V <0.48 Ω 11 A 30 W
STP13NK50Z 500 V <0.48 Ω 11 A 140 W
STW13NK50Z 500 V <0.48 Ω 11 A 140 W

 
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
 
Applications
■ Switching application
 
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
 
Absolute maximum ratings

Symbol Parameter Value Unit
TO-220, TO-247 TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate-source voltage ± 30 V
ID Drain current (continuous) at TC = 25 °C 11 11(1) A
ID Drain current (continuous) at TC=100 °C 6.93 6.93(1) A
IDM(2) Drain current (pulsed) 44 44(1) A
PTOT Total dissipation at TC = 25 °C 140 30 W
  Derating factor 1.12 0.24 W/°C
dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (RMS) from all three leads to external heat sin (t=1 s;TC= 25 °C)   2500 V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150 °C

1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS
 

 
Internal schematic diagram

 
 
Stock Offer (Hot Sell)

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