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Home > products > Electronic IC Chips > NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-264
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Base Voltage:
230 V
Collector-Emitter Voltage:
230 V
Emitter-Base Voltage:
5 V
Collector Current(DC):
15 A
Base Current:
1.5 A
Junction And Storage Temperature:
- 50 ~ +150 °C
Highlight:

npn smd transistor

,

multi emitter transistor

Introduction

 

2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

 

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

 

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

  -- TO3P package, 2SC5242/FJA4313 : 130 watts

  -- TO220 package, FJP5200 : 80 watts

  -- TO220F package, FJPF5200 : 50 watts

 

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

  Symbol             Parameter      Ratings       Units
  BVCBO   Collector-Base Voltage     230         V
  BVCEO   Collector-Emitter Voltage     230         V
  BVEBO   Emitter-Base Voltage       5         V
   IC   Collector Current(DC)      15         A
   IB   Base Current      1.5         A
   PD

  Total Device Dissipation(TC=25°C)

  Derate above 25°C

     150

     1.04

        W

      W/°C

  TJ, TSTG   Junction and Storage Temperature     - 50 ~ +150         °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

 

Thermal Characteristics* Ta=25°C unless otherwise noted   

  Symbol             Parameter      Max      Units
   RθJC   Thermal Resistance, Junction to Case      0.83      °C/W

* Device mounted on minimum pad size

 

hFE Classification

   Classification            R             O
      hFE1       55 ~ 110        80 ~ 160

 

 

Typical Characteristics

 

 

 

Package Dimensions

 

 

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