Send Message
Home > products > Electronic IC Chips > 2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 130 W Through Hole TO-3P
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union,Paypal
Specifications
HFE Classification R:
55-110
HFE Classification O:
80-160
Main Line:
IC Components, Transistor, Diode, Module,Capacitor Etc
Voltage:
230V
Temperature:
-50-+150°C
Package:
TO-3P
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

 

 

 

NPN Epitaxial Silicon Transistor 2SC5242 

 

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier Features

• High Current Capability: IC = 15A

• High Power Dissipation : 130watts

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1962/FJA4213.

• Thermal and electrical Spice models are available

• Same transistor is also available in: --TO264 package,

2SC5200/FJL4315 : 150 watts --TO220 package,

FJP5200 : 80 watts --TO220F package, FJPF5200 : 50 watts

 

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

 

Symbol Parameter Ratings Units
BVCBO Collector-Base Voltage 230 V
BVCEO Collector-Emitter Voltage 230 V
BVEBO Emitter-Base Voltage 5 V
IC Collector Current(DC) 15 A
IB Basic Current 1.5 A
PD Total Device Dissipation(TC=25°C) Derate above 25°C

130

1.04

W

W/°C

TJ, TSTG Junction and Storage Temperature -50-+150 °C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

 

Thermal Characteristics* Ta=25°C unless otherwise noted

Symbol Parameter MAX. Unit
RθJC Thermal Resistance, Junction to Case 0.96 W/°C

* Device mounted on minimum pad size

 

 

 

 

Related Products
Image Part # Description
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

Diode 60 V 1A Surface Mount SOD-123W
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

Diode 40 V 3A Surface Mount DO-214AC, SMA
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
Send RFQ
Stock:
MOQ:
50