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Home > products > Electronic IC Chips > PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER

PZT2222A Power Mosfet Transistor NPN GENERAL PURPOSE AMPLIFIER

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 1 W Surface Mount SOT-223
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Base Voltage:
75 V
Collector-Emitter Voltage:
40 V
Emitter-Base Voltage:
6 V
Collector Current:
0.6 A
Total Device Dissipation:
1 W
Junction Temperature:
+150 °C
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

PZT2222A NPN SILICON TRANSISTOR

NPN GENERAL PURPOSE AMPLIFIER

 

FEATURES

* This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.

 

 

 

ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 0.6 A
Total Device Dissipation PC 1 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

 

 

 

 

Stock Offer (Hot Sell)

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