PMBT2907A Power Mosfet Transistor Low voltage PNP switching transistors
power mosfet ic
,silicon power transistors
PMBT2907; PMBT2907A
PNP switching transistors
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: PMBT2222 and PMBT2222A.
MARKING
TYPE NUMBER | MARKING CODE(1) |
---|---|
PMBT2907 | *2B |
PMBT2907A | *2F |
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
---|---|---|---|---|---|
VCBO | collector-base voltage | open emitter | − | −60 | V |
VCEO |
emitter-base voltage PMBT2907 PMBT2907A |
open base |
− − |
−40 −60 |
V V |
VEBO | emitter-base voltage | open collector | − | −5 | V |
IC | collector current (DC) | − | −600 | mA | |
ICM | peak collector current | − | −800 | mA | |
IBM | peak base current | − | −200 | mA | |
Ptot | total power dissipation | Tamb ≤ 25 °C | − | 250 | mW |
Tstg | storage temperature | −65 | +150 | °C | |
Tj | junction temperature | − | 150 | °C | |
Tamb | operating ambient temperature | −65 | +150 | °C |
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