TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS
multi emitter transistor
,silicon power transistors
MOSFETs Silicon N-Channel MOS (DTMOS)
TK10P60W
Applications
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-source voltage | VDSS | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current (DC) (Note 1) | ID | 9.7 | A |
| Drain current (pulsed) (Note 1) | IDP | 38.8 | A |
| Power dissipation (Tc = 25℃) | PD | 80 | W |
| Single-pulse avalanche energy (Note 2) | EAS | 121 | mJ |
| Avalanche current | IAR | 2.5 | A |
| Reverse drain current (DC) (Note 1) | IDR | 9.7 | A |
| Reverse drain current (pulsed) (Note 1) | IDRP | 38.8 | A |
| Channel temperature | Tch | 150 | ℃ |
| Storage temperature | Tstg | -55 to 150 | ℃ |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note
1: Ensure that the channel temperature does not exceed 150℃. Note
2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A
Stock Offer (Hot Sell)
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| Image | Part # | Description | |
|---|---|---|---|
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0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL |
10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
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200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603 |
30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
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22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC |
22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
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MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm |
750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
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2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor |
Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
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IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A |
N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
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DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes |
47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
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PMEG6010ER 1A Low VF MEGA Schottky Barrier Rectifier SOD123 |
Diode 60 V 1A Surface Mount SOD-123W
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SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC |
Diode 40 V 3A Surface Mount DO-214AC, SMA
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SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes |
9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
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