INA128PA Precision Low Power Mosfet Transistor Instrumentation Amplifiers Printed Circuit Board
multi emitter transistor
,silicon power transistors
INA128PA Precision, Low Power INSTRUMENTATION AMPLIFIERS printed circuit board
FEATURES
● LOW OFFSET VOLTAGE: 50µV max
● LOW DRIFT: 0.5µV/°C max
● LOW INPUT BIAS CURRENT: 5nA max
● HIGH CMR: 120dB min
● INPUTS PROTECTED TO ±40V
● WIDE SUPPLY RANGE: ±2.25 to ±18V
● LOW QUIESCENT CURRENT: 700µA
● 8-PIN PLASTIC DIP, SO-8
APPLICATIONS
● BRIDGE AMPLIFIER
● THERMOCOUPLE AMPLIFIER
● RTD SENSOR AMPLIFIER
● MEDICAL INSTRUMENTATION
● DATA ACQUISITION
DESCRIPTION
The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. Their versatile 3-op amp design and small size make them ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200kHz at G = 100).
A single external resistor sets any gain from 1 to 10,000. INA128 provides an industry standard gain equation; INA129’s gain equation is compatible with the AD620.
The INA128/INA129 is laser trimmed for very low offset voltage (50µV), drift (0.5µV/°C) and high common-mode rejection (120dB at G ≥ 100). It operates with power supplies as low as ±2.25V, and quiescent current is only 700µA—ideal for battery operated systems. Internal input protection can withstand up to ±40V without damage.
The INA128/INA129 is available in 8-pin plastic DIP, and SO-8 surface-mount packages, specified for the –40°C to +85°C temperature range. The INA128 is also available in dual configuration, the INA2128.
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