BC327-40 Power Mosfet Transistor PNP general purpose transistor
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP 45 V 800 mA 100MHz 625 mW Through Hole TO-92
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-base Voltage:
−50 V
Collector-emitter Voltage:
−45 V
Emitter-base Voltage:
−5 V
Collector Current (DC):
−500 MA
Total Power Dissipation:
625 MW
Storage Temperature:
−65 To +150 °C
Highlight:
power mosfet ic
,silicon power transistors
Introduction
Stock Offer (Hot Sell)
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| FDLL4148 | 25000 | FAIRCHILD | 15+ | LL34 |
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| FDMS86500L | 8142 | FAIRCHILD | 13+ | QFN-8 |
| FDMS86520L | 7901 | FAIRCHILD | 15+ | QFN |
| FDMS8672S | 6190 | FAIRCHILD | 16+ | QFN-8 |
| FDMS8692 | 20717 | FAIRCHILD | 16+ | QFN |
BC327 PNP general purpose transistor
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BC337.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | −50 | V |
| VCEO | collector-emitter voltage | open base | − | −45 | V |
| VEBO | emitter-base voltage | open collector | − | −5 | V |
| IC | collector current (DC) | − | −500 | mA | |
| ICM | peak collector current | − | −1 | A | |
| IBM | peak base current | − | −200 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 °C; note 1 | − | 625 | mW |
| Tstg | storage temperature | −65 | +150 | °C | |
| Tj | junction temperature | − | 150 | °C | |
| Tamb | operating ambient temperature | −65 | +150 | °C |
Note 1. Transistor mounted on an FR4 printed-circuit board.
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
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MOQ:
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