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Home > products > Electronic IC Chips > NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

NJW0302G Complementary switching Power Mosfet Transistor , NPN - PNP Power Bipolar Transistors

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP 250 V 15 A 30MHz 150 W Through Hole TO-3P-3L
Category:
Electronic IC Chips
Price:
negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
VCEO:
250 Vdc
VCBO:
250 Vdc
VEBO:
5.0 Vdc
VCEX:
250 Vdc
IC:
15 30 Adc
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

Complementary NPN-PNP Power Bipolar Transistors

These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.

 

Features

•Exceptional Safe Operating Area

•NPN/PNP Gain Matching within 10% from 50 mA to 3 A

•Excellent Gain Linearity

•High BVCEO

•High Frequency

•These are Pb-Free Devices Bene

 

Benefits

•Reliable Performance at Higher Powers

•Symmetrical Characteristics in Complementary Configurations •Accurate Reproduction of Input Signal

•Greater Dynamic Range

•High Amplifier Bandwith App

 

 

MAXIMUM RATINGS

Rating  Symbol  Value  Unit
Collector-Emitter Voltage  VCEO  250  Vdc
Collector-Base Voltage VCBO  250  Vdc
Emitter-Base Voltage  VEBO  5.0  Vdc
Collector-Emitter Voltage - 1.5 V  VCEX  250  Vdc

 

 

 

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MOQ:
50pcs