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Home > products > Electronic IC Chips > MJE15032G MJE15033G Power Mosfet Transistor complementary power mosfet

MJE15032G MJE15033G Power Mosfet Transistor complementary power mosfet

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 250 V 8 A 30MHz 50 W Through Hole TO-220
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Emitter Voltage:
250 Vdc
Collector-Bsae Voltage:
250 Vdc
Emitter-Bsae Voltage:
5.0 Vdc
Bsae Current:
2.0 Adc
Operating Junction Temperature:
-65 To +150 ℃
Storage Temperature:
-65 To +150 ℃
Highlight:

multi emitter transistor

,

silicon power transistors

Introduction

 

Stock Offer (Hot Sell)

Part no. Quantity Brand D/C Package
BCX71G 48000 FAIRCHILD 15+ SOT-23
UC3842 49825 ON 16+ DIP-8
2SA1774TLR 50000 ROHM 16+ SOT23-3
2SC3355 50000 NEC 14+ TO-92
FDN338P 50000 FSC 14+ SOT-23
KIA78L08 50000 KEC 14+ SOT89
SS13 50000 VISHAY 16+ SMA
MBT2907ALT1G 51200 ON 16+ SOT-23
BAV70 52000 13+ SOT23
SK16 52000 MOSPEC 15+ SMA
UMX1N 60000 ROHM 16+ SOT363
NJM4558D-#ZZZB 70000 JRC 16+ DIP8
2SA1586-GR 78000 TOSHIBA 14+ SOT-323
SMBJ18A 88000 VISHAY 14+ DO-214AA
UC3842BD1013TR 90000 ST 14+ SOP8
FR607 98000 MIC 16+ R-6
BC857BLT1G 99000 ON 16+ SOT-23
78L05 100000 TI 13+ TO92
AP8022 100000 CHIPOWN 15+ DIP-8
SMBJ12CA 101000 VISHAY 16+ SMB
BC847BLT1G 117000 ON 16+ SOT-23
BAT54A 6000 14+ SOT-23
2N7002P 3000 14+ STO-23
AD9957BSVZ 2010 ADI 14+ QFP
BY500-800 2015 VISHAY 16+ DO-201
LM311P 2020 TI 16+ DIP8
XC5VSX95T-1FFG1136C 525 XILINX 13+ BGA
XC5VSX95T-1FFG1136I 530 XILINX 15+ BGA
AD9958BCPZ 2035 AD 16+ BGA
BD237 2040 16+ DIP

 

 

MJE15032 (NPN), MJE15033 (PNP)

Complementary Silicon Plastic Power Transistors

 

8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

Designed for use as high−frequency drivers in audio amplifiers.

 

Features

• DC Current Gain Specified to 5.0 Amperes

  hFE = 70 (Min) @ IC = 0.5 Adc

         = 10 (Min) @ IC = 2.0 Adc

• Collector−Emitter Sustaining Voltage

  − VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033

 

• High Current Gain − Bandwidth Product

  fT = 30 MHz (Min) @ IC = 500 mAdc

• TO−220AB Compact Package

 

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model C

                        Human Body Model 3B

• Pb−Free Packages are Available*

 

MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Collector-Emitter Voltage

VCEO

250

Vdc

Collector-Bsae Voltage

VCB

250

Vdc

Emitter-Bsae Voltage

VEB

5.0

Vdc

Collector Current -Continuous

                  -Peak

IC

8.0

16

Adc

Bsae Current

IB

2.0

Adc

Total Power Dissipation @TC=25℃

  Derate above 25℃

PD

50

0.40

W

W/℃

Total Power Dissipation @TA=25℃

  Derate above 25℃

PD

2.0

0.016

W

W/℃

Storage and Operating Junction Temperature Range

TJ, TSTG

-65 to +150

 

 

 

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AA

 

 

 

 

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