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Home > products > Electronic IC Chips > 2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor

2N3906 PNP General Purpose Amplifier Power Mosfet Transistor PNP switching transistor

manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-base Voltage:
−40 V
Collector-emitter Voltage:
−40 V
Emitter-base Voltage:
−6 V
Total Power Dissipation:
500 MW
Storage Temperature:
−65 To +150 °C
Operating Ambient Temperature:
−65 To +150 °C
Highlight:

power mosfet ic

,

multi emitter transistor

Introduction

 
PNP switching transistor 2N3906
 
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
 
APPLICATIONS
• High-speed switching in industrial applications.
 
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904.
 
PINNING

PINDESCRIPTION
1collector
2base
3emitter

 
 
 
 
 
 
 
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VCBOcollector-base voltageopen emitter−40V
VCEOcollector-emitter voltageopen base−40V
VEBOemitter-base voltageopen collector−6V
ICcollector current (DC) −200mA
ICMpeak collector current −300mA
IBMpeak base current −100mA
Ptottotal power dissipationTamb ≤ 25 °C500mW
Tstgstorage temperature −65+150°C
Tjjunction temperature 150°C
Tamboperating ambient temperature −65+150°C

 

Fig.2 DC current gain; typical values.
 

Fig.3 Test circuit for switching times
 
 
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads                                                      SOT54
 
 
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