BFR520 Power Mosfet Transistor NPN 9 GHz Wideband Transistor
manufacturer:
Manufacturer
Description:
RF Transistor NPN 15V 70mA 9GHz 150mW Surface Mount SC-75
Category:
Electronic IC Chips
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Collector-base Voltage:
20 V
Collector-emitter Voltage:
15 V
DC Collector Current:
70 MA
Total Power Dissipation:
300 MW
Feedback Capacitance:
0.4 PF
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
NPN 9 GHz wideband transistor BFR520
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
DESCRIPTION
The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistor is encapsulated in a plastic SOT23 envelope
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | − | 20 | V |
| VCES | collector-emitter voltage | RBE = 0 | − | 15 | V |
| VEBO | emitter-base voltage | open collector | − | 2.5 | V |
| C DC | collector current | − | 70 | mA | |
| Ptot | total power dissipation | up to Ts = 97 °C; note 1 | − | 300 | mW |
| Tstg | storage temperature | −65 | 150 | °C |
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MOQ:
20pcs