Complementary Silicon Power Ttransistors BD139
manufacturer:
Manufacturer
Description:
Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32-3
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Collector-Base Voltage:
80V
Collector-Emitter Voltage:
80V
Emitter-Base Voltage:
5V
Collector Current:
1.5A
Highlight:
power mosfet ic
,multi emitter transistor
Introduction
Complementary Silicon Power Ttransistors BD139 / BD140
DESCRIPTION
It is intented for use in power amplifier and switching applications.
| Parameter | l | Value | Unit |
| Collector-Base Voltage | VCBO | 80 | V |
| Collector-Emitter Voltage | VCEO | 80 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 1.5 | A |
| Base Current | IB | 0.5 | A |
| Total Dissipation at | Ptot | 12.5 | W |
| Max. Operating Junction Temperature | Tj | 150 | oC |
| Storage Temperature | Tstg | -55~150oC | oC |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector Cut-off Current | ICEO | VCB=80V, IE=0 | -- | -- | 10 | uA |
| Emitter Cut-off Current | IEBO | VEB=5V, IC=0 | -- | -- | 10 | uA |
| Collector-Emitter Sustaining Voltage | VCEO | IC=30mA, IB=0 | 80 | -- | -- | V |
| DC Current Gain |
hFE(1) hFE(2) |
VCE=2V, IC=0.5A VCE=2V, IC=150mA |
25 40 |
-- -- |
-- 250 |
|
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=0.5A,IB=50mA | -- | -- | 0.5 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | VCE=2V,IC=0.5A | -- | -- | 1.0 | V |
| Current Gain Bandwidth Product | fT | VCE=10V,IC=500mA | 3 | -- | -- | MHz |
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