Transistor (Npn) For General Af Applications , High Collector Current Bc817-40
Specifications
Collector-Base Voltage:
50 V
Collector-Emitter Voltage:
45 V
Emitter-Base Voltage:
5 V
Collector Current -Continuous:
0.5 A
Collector Power Dissipation:
0.3 W
Highlight:
multi emitter transistor
,silicon power transistors
Introduction
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC807.../W, BC808.../W (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 50 | V |
VCEO | Collector-Emitter Voltage | 45 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current -Continuous | 0.5 | A |
PC | Collector Power Dissipation | 0.3 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
Typical Characteristics
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