IRF7424TRPBF HEXFET Power MOSFET testing power transistors
manufacturer:
Manufacturer
Description:
P-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain- Source Voltage:
-30 V
Continuous Drain Current, VGS @ -10V:
-9.3 A
Pulsed Drain Current :
-47 A
Power Dissipation :
2.5 W
Highlight:
bridge rectifier circuit
,signal schottky diode
Introduction
IRF7424TRPBF HEXFETPower MOSFET testing power transistors
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | -30 | V |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ -10V | -11 | A |
| ID @ TA= 70°C | Continuous Drain Current, VGS @ -10V | -9.3 | |
| IDM | Pulsed Drain Current | -47 | |
| PD @TA = 25°C | Power Dissipation |
2.5 |
W |
| PD @TA = 70°C | Power Dissipation | 1.6 | |
| Linear Derating Factor | 20 | mW/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
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Stock:
MOQ:
20pcs