SM8A27HE3-2D Rectifier Diode Surface Mount PAR Transient Voltage Suppressors
manufacturer:
Manufacturer
Description:
40V Clamp 75A (8/20µs) Ipp Tvs Diode Surface Mount DO-218AB
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Peak Pulse Power Dissipation With 10/1000 μs Waveform:
6600 W
Power Dissipation On Infinite Heatsink At TC = 25 °C:
8.0 W
Non-repetitive Peak Reverse Surge Current For 10 μs/10 Ms Exponentially Decaying Waveform:
130 A
Maximum Working Stand-off Voltage:
22.0 V
Peak Forward Surge Current 8.3 Ms Single Half Sine-wave:
700 A
Operating Junction And Storage Temperature:
- 55 To + 175 °C
Highlight:
bridge rectifier circuit
,signal schottky diode
Introduction
SM8A27
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
PRIMARY CHARACTERISTICS
| VBR | 27 V |
| PPPM (10 x 1000 μs) | 6600 W |
| PD | 8 W |
| IRSM | 130 A |
| IFSM | 700 A |
| TJ max. | 175 °C |
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
| PARAMETER | SYMBOL | VALUE | UNIT |
|---|---|---|---|
| Peak pulse power dissipation with 10/1000 μs waveform | PPPM | 6600 | W |
| Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) | PD | 8.0 | W |
| Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially decaying waveform | IRSM | 130 | A |
| Maximum working stand-off voltage | VWM | 22.0 | V |
| Peak forward surge current 8.3 ms single half sine-wave | IFSM | 700 | A |
| Operating junction and storage temperature range | TJ, TSTG | - 55 to + 175 | °C |
Stock Offer (Hot Sell)
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MOQ:
100 pcs