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Home > products > Electronic IC Chips > MBRS1100T3G Rectifier Diode Schottky Power Rectifier Surface Mount

MBRS1100T3G Rectifier Diode Schottky Power Rectifier Surface Mount

manufacturer:
Manufacturer
Description:
Diode 100 V 1A Surface Mount SMB
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
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Specifications
Peak Repetitive Reverse Voltage:
100 V
Working Peak Reverse Voltage:
100 V
DC Blocking Voltage:
100 V
Non−Repetitive Peak Surge Current:
50 A
Operating Junction Temperature:
−65 To +175 °C
Voltage Rate Of Change:
10 V/ns
Highlight:

diode rectifier circuit

,

bridge rectifier circuit

Introduction

 

MBRS1100T3, MBRS190T3

Schottky Power Rectifier

Surface Mount Power Package

 

1.0 AMPERE

90, 100 VOLTS

 

 

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features:

 

Features

• Pb−Free Packages are Available

• Small Compact Surface Mountable Package with J-Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• High Blocking Voltage − 100 Volts

• 175°C Operating Junction Temperature

• Guardring for Stress Protection

 

Mechanical Characteristics

• Case: Epoxy, Molded

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped in 12 mm Tape and Reel, 2500 units per reel

• Cathode Polarity Band

 

 

 

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

MBRS190T3

VRRM

VRWM

VR

90

V
MBRS1100T3 100

Average Rectified Forward Current

TL = 163°C IF(AV) 1.0 A
TL = 148°C 2.0

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 50 A
Operating Junction Temperature (Note 1) TJ −65 to +175 °C
Voltage Rate of Change dv/dt 10 V/ns

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.

 

 

 

 

Stock Offer (Hot Sell)

Part no. Quantity Brand D/C Package
NL17SZ06 4500 ON 13+ SOT553
Q6040K7 4500 LITTELFUS 15+ TO-3P
STM8324 4500 SAMHOP 16+ SOP8
TDA2050 4500 ST 16+ ZIP
IRF7105 4510 IR 14+ SOP8
DB104 4511 COMON 14+ DIP-4
AT24C02 4520 ATMEL 14+ SOP8
L7806 4520 ST 16+ TO-220
LM3915N-1 4520 NS 16+ DIP18
UC3525BN 4520 TI 13+ DIP-16
CA741CE 4522 HARRIS 15+ DIP
OP2177ARZ 4522 AD 16+ SOP8
X5043PI 4522 INTERSIL 16+ DIP8
DS1302Z 4567 MAXIM 14+ SOP8
LT1248CN 4580 LT 14+ DIP
TNY276GN 4580 POWER 14+ SOP-7
BT151-650R 4600 16+ TO-220
FQA24N60 4600 FAIRCHILD 16+ TO-247
MIC29502BU 4600 MIC 13+ TO-263
MIC29302WU 4700 MICREL 15+ TO-263
NCP2820FCT1G 4700 ON 16+ QFN
SN74LVC1G175DCKR 4700 TI 16+ SC70-6
H11L1SM 4710 FAIRCHILD 14+ SOP8
TA8276HQ 4710 TOSHIBA 14+ ZIP-25
FM24CL64-G 4711 RAMTRON 14+ SOP8
GT50J101 4711 TOSHIBA 16+ TO-3PL
RCLAMP0524P 4711 SEMTECH 16+ QFN
L6208PD 4712 ST 13+ HSSOP
FOD817 4720 FAIRCHILD 15+ SOP4
IRF9530 4744 IR 16+ TO-220

 

 

 

 

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