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Home > products > Electronic IC Chips > PMBD914,235 high power Single high speed switching diode 100 V repetitive peak reverse voltage

PMBD914,235 high power Single high speed switching diode 100 V repetitive peak reverse voltage

manufacturer:
Manufacturer
Description:
Diode 100 V 215mA Surface Mount TO-236AB
Category:
Electronic IC Chips
Price:
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Payment Method:
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Specifications
Repetitive Peak Reverse Voltage:
100 V
Reverse Voltage:
100 V
Forward Current:
215 MA
Total Power Dissipation Tamb ≤ 25 °C:
250 MW
Junction Temperature:
150 °C
Storage Temperature:
−65 To +150 °C
Highlight:

diode rectifier circuit

,

signal schottky diode

Introduction

 

PMBD914 high power Single high speed switching diode 100 V repetitive peak reverse voltage

 

PMBD914

Single high-speed switching diode

 

General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

 

Features

■ High switching speed: trr ≤ 4 ns

■ Low capacitance: Cd ≤ 1.5 pF

■ Low leakage current

■ Reverse voltage: VR ≤ 100 V

■ Repetitive peak reverse voltage: VRRM ≤ 100 V

■ Small SMD plastic package

 

Applications

■ High-speed switching

 

Quick reference data

Symbol Parameter Conditions Min Typ Max Unit
IF forward current [1] - - 215 mA
VR reverse voltage   - - 100 V
trr reverse recovery time [2] - - 4 ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

 

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage   - 100 V
VR reverse voltage   - 100 V
IF forward current [1] - 215 mA
IFRM repetitive peak forward current   - 500 mA

IFSM

 

 

 

non-repetitive peak forward current

 

 

 

square wave       [2]      
tp = 1 µs - 4 A
tp = 1 ms - 1 A
tp = 1 s - 0.5 A
Ptot total power dissipation Tamb ≤ 25 °C   [1][3] - 250 mW
Tj junction temperature   - 150 °C
Tstg storage temperature   −65 +150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Tj = 25 °C prior to surge.

[3] Soldering point of cathode tab.

 

Reverse recovery time test circuit and waveforms

 

 

Forward recovery voltage test circuit and waveforms

 

 

Package outline SOT23 (TO-236AB)

 

 

 

 

 

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