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Home > products > Display Driver ICs > TC4423COE/TC4423CPA Circuit Board Chips Integrated Circuit Chip Program Memory

TC4423COE/TC4423CPA Circuit Board Chips Integrated Circuit Chip Program Memory

manufacturer:
Manufacturer
Description:
Low-Side Gate Driver IC Inverting 16-SOIC
Category:
Display Driver ICs
Price:
Negotiation
Payment Method:
T/T, Western Union,PayPal
Specifications
Temperature Range:
–40°C To +150°C
Payment Term:
T/T, Paypal, Western Union
Voltage:
22 V
Current:
9mA
Package:
SOP-16/DIP-8
Factory Package:
Reel
Highlight:

circuit board ic

,

electronic chip board

Introduction

3A Dual High-Speed Power MOSFET Drivers

 

Features

 

• High Peak Output Current: 3A

• Wide Input Supply Voltage Operating Range: - 4.5V to 18V

• High Capacitive Load Drive Capability: - 1800 pF in 25 ns

• Short Delay Times: <40 ns (typ)

• Matched Rise/Fall Times

• Low Supply Current: - With Logic ‘1’ Input

– 3.5 mA (Max) - With Logic ‘0’ Input

– 350 µA (Max) • Low Output Impedance: 3.5Ω (typ)

• Latch-Up Protected: Will Withstand 1.5A Reverse Current

• Logic Input Will Withstand Negative Swing Up To 5V

• ESD Protected: 4 kV

• Pin compatible with the TC1426/TC1427/TC1428, TC4426/TC4427/TC4428 and TC4426A/ TC4427A/TC4428A devices.

• Space-saving 8-Pin 6x5 DFN Package

 

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive • Line Drivers

 

General Description

 

The TC4423/TC4424/TC4425 devices are a family of 3A, dual-output buffers/MOSFET drivers. Pin compatible with the TC1426/27/28, TC4426/27/28 and TC4426A/27A/28A dual 1.5A driver families, the TC4423/24/25 family has an increased latch-up current rating of 1.5A, making them even more robust for operation in harsh electrical environments. As MOSFET drivers, the TC4423/TC4424/TC4425 can easily charge 1800 pF gate capacitance in under 35 nsec, providing low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. The TC4423/TC4424/TC4425 inputs may be driven directly from either TTL or CMOS (2.4V to 18V). In addition, the 300 mV of built-in hysteresis provides noise immunity and allows the device to be driven from slowly rising or falling waveforms.

 

ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B ................................................(VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA ≤ 70°C)
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW SOIC.......................................................................470 mW

 
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