AO3400A Circuit Board Chips N-Channel Enhancement Mode Field Effect Transistor
manufacturer:
Manufacturer
Description:
N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
Category:
Electronic IC Chips
Price:
0.1USD
Payment Method:
T/T, Western Union,Paypal
Specifications
Description:
Advanced Trench Technology
Voltage:
2.5V
FEATURES:
UL Recognized (File # E90700, Volume 2)
Type:
Transistor
Applications:
Meets ROHS & Sony 259 Specifications
Parameter:
Drain-Source Breakdown Voltage
Highlight:
circuit board ic
,electronic chip board
Introduction
AO3400A N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications.
Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
8.5C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
0.0 D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.40AE. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA #DIV/0! curve provides a single pulse rating.
F: The current rating is based on the t≤10s thermal resistance rating.Rev0: Apr. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
| Thermal Characteristics | |||||
|
Parameter
|
Symbol
|
Typ Max
|
Units
|
||
|
Maximum Junction-to-Ambien A
|
t≤10s
|
RθJA
|
70
|
90
|
°C/W
|
|
Maximum Junction-to-Ambient A
|
Steady-State
|
100
|
125
|
°C/W
|
|
|
Maximum Junction-to-Lead C
|
Steady-State |
RθJL
|
63 | 80 | °C/W |
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