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Home > products > Power Management ICs > Family Of Wide Bandwith High Output Drive Single Supply Operational Amplifiers Tl7757cdr

Family Of Wide Bandwith High Output Drive Single Supply Operational Amplifiers Tl7757cdr

manufacturer:
Texas Instruments
Description:
Supervisor Open Drain or Open Collector 1 Channel 8-SOIC
Category:
Power Management ICs
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Supply Voltage:
17 V
Operating Free-air Temperature Range, TA: C Suffix:
0°C To 70°C
Operating Free-air Temperature Range, TA: I Suffix:
−40 °C To 125°C
Maximum Junction Temperature, TJ:
150 °C
Storage Temperature Range, Tstg:
−65°C To 150°C
Lead Temperature 1,6 Mm (1/16 Inch) From Case For 10 Seconds:
260°C
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Introduction

 

 FAMILY OF WIDE-BANDWITH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

 

*Wide Bandwidth . . . 10 MHz 

*High Output Drive

  − IOH . . . 57 mA at VDD − 1.5 V                                                                            Operational Amplifier

  − IOL . . . 55 mA at 0.5 V 

*High Slew Rate

  − SR+ . . . 16 V/µs

  − SR− . . . 19 V/µs 

*Wide Supply Range . . . 4.5 V to 16 V 

*Supply Current . . . 1.9 mA/Channel 

*Ultralow Power Shutdown Mode

  IDD . . . 125 µA/Channel 

*Low Input Noise Voltage . . . 8.5 nV√Hz 

*Input Offset Voltage . . . 60 µV 

*Ultra-Small Packages

  − 8 or 10 Pin MSOP (TLC080/1/2/3)

 

description

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (−40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPADTM packages and shutdown modes, enable higher levels of performance in a variety of applications.

 

Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/√Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.

 

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†

Supply voltage, VDD (see Note 1)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17 V

Differential input voltage range, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . ±VDD

Continuous total power dissipation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  See Dissipation Rating Table

Operating free-air temperature range, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C

                                                                    I suffix  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C

Maximum junction temperature, TJ  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . .150 °C

Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  . . . . . . . . . . . . . . . . . . . . . . . . .  260 °C

 

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values, except differential voltages, are with respect to GND.

 

DISSIPATION RATING TABLE

  PACKAGE                 θJC (°C/W)                     θJA (°C/W)                   TA ≤ 25°C POWER RATING
   D (8)                           38.3                                 176                                710 mW
   D (14)                         26.9                                 122.3                            1022 mW
   D (16)                         25.7                                 114.7                            1090 mW
   DGN (8)                       4.7                                   52.7                               2.37 W
   DGQ (10)                    4.7                                    52.3                               2.39 W
   N (14, 16)                    32                                     78                                1600 mW
   P (8)                            41                                    104                               1200 mW
   PWP (20)                   1.40                                   26.1                               4.79 W

 

recommended operating conditions

       MIN                 MAX    UNIT
  Supply voltage, VDD  Single supply    4.5                  16    V
 Split supply    ±2.25               ±8
  Common-mode input voltage, VICR    GND              VDD−2    V
  Shutdown on/off voltage level‡  VIH     2    V
 VIL                             0.8
  Operating free-air temperature, TA  C-suffix     0                      70    °C
 I-suffix    -40                   125

‡ Relative to the voltage on the GND terminal of the device.

 

 

APPLICATION INFORMATION

 

 

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