2SC5171 Audio Power Amplifier IC Transistor Silicon NPN Epitaxial Type 200 MHz
2SC5171
,TOSHIBA original chip
,Audio Power Amplifier IC
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications
FEATURES
• High transition frequency: fT = 200 MHz (typ.)
• Complementary to 2SA1930
Electrical Characteristics (Tc = 25°C)
|
Characteristics |
Symbol |
Test Condition |
Min |
Typ. |
Max |
Unit |
|
Collector cut-off current |
ICBO |
VCB = 180 V, IE = 0 |
― |
― |
5.0 |
μA |
|
Emitter cut-off current |
IEBO |
VEB = 5 V, IC = 0 |
― |
― |
5.0 |
μA |
|
Collector-emitter breakdown voltage |
V (BR) CEO |
IC = 10 mA, IB = 0 |
180 |
― |
― |
V |
|
DC current gain |
hFE (1) |
VCE = 5 V, IC = 0.1 A |
100 |
― |
320 |
|
|
hFE (2) |
VCE = 5 V, IC = 1 A |
50 |
― |
― |
||
|
Collector-emitter saturation voltage |
VCE (sat) |
IC = 1 A, IB = 0.1 A |
― |
0.16 |
1.0 |
V |
|
Base-emitter voltage |
VBE |
VCE = 5 V, IC = 1 A |
― |
0.68 |
1.5 |
V |
|
Transition frequency |
fT |
VCE = 5 V, IC = 0.3 A |
― |
200 |
― |
MHz |
|
Collector output capacitance |
Cob |
VCB = 10 V, IE = 0, f = 1 MHz |
― |
16 |
― |
pF |
Absolute Maximum Ratings (Tc = 25°C)
|
Characteristics |
Symbol |
Rating |
Unit |
|
|
Collector-base voltage |
VCBO |
180 |
V |
|
|
Collector-emitter voltage |
VCEO |
180 |
V |
|
|
Emitter-base voltage |
VEBO |
5 |
V |
|
|
Collector current |
IC |
2 |
A |
|
|
Base current |
IB |
1 |
A |
|
|
Collector power dissipation |
Ta = 25°C |
PC |
2.0 |
W |
|
Tc = 25°C |
20 |
|||
|
Junction temperature |
Tj |
150 |
°C |
|
|
Storage temperature range |
Tstg |
−55 to 150 |
°C |
|
Applications
• Power Amplifier Applications
• Driver Stage Amplifier Applications
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