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Home > products > Flash Memory IC Chip > SS26T3G Mosfet Power Transistor Schottky Diodes & Rectifiers 2A 60V

SS26T3G Mosfet Power Transistor Schottky Diodes & Rectifiers 2A 60V

SS26T3G Mosfet Power Transistor Schottky Diodes & Rectifiers 2A 60V
Category:
Flash Memory IC Chip
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Specifications
Ifsm - Forward Surge Current:
40 A
Vf - Forward Voltage:
0.63 V
Vrrm - Repetitive Reverse Voltage:
60 V
If - Forward Current:
2 A
Package / Case:
SMB
Technology:
Si
Highlight:

mosfet motor control circuit

,

n channel mos field effect transistor

Introduction

SS26T3G Mosfet Power Transistor Schottky Diodes & Rectifiers 2A 60V

 

Features

  • Compact Package with J−Bend Leads Ideal for Automated Handling

  • Highly Stable Oxide Passivated Junction

  • Guardring for Overvoltage Protection

  • Low Forward Voltage Drop

  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*

  • Pb−Free Package is Available

     

Mechanical Characteristics:

  • Case: Molded Epoxy

  • Epoxy Meets UL 94, V−O at 0.125 in

  • Weight: 95 mg (approximately)

  • Cathode Polarity Band

  • Lead and Mounting Surface Temperature for Soldering Purposes:

    260°C Max. for 10 Seconds

  • Available in 12 mm Tape, 2500 Units per 13′′ Reel, Add “T3” Suffix

    to Part Number

  • Finish: All External Surfaces Corrosion Resistant and Terminal

    Leads are Readily Solderable

  • ESD Ratings: Human Body Model = 3B

    Machine Model = C

  • Marking: SS26

ORDERING INFORMATION

Device

Package

Shipping

SS26T3G

SMB (Pb−Free)

2500 / Tape & Reel

NRVBSS26T3G*

SMB (Pb−Free)

2500 / Tape & Ree 

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